| PART |
Description |
Maker |
| GS72108ATP78I GS72108AGP-10 GS72108AGP-10I GS72108 |
256K x 8 2Mb Asynchronous SRAM
|
ETC[ETC]
List of Unclassifed Manufacturers
|
| M48Z2M1V-85PL1 |
16 MBIT (2MB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| GS820E32AT GS820E32AT-180 GS820E32AT-180I GS820E32 |
64K x 32 2Mb Synchronous Burst SRAM
|
GSI[GSI Technology]
|
| CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| MT55L128L18F1 |
128K x 18, 3.3V I/O,ZBT SRAM(2Mb,3.3V输入/输出，静态RAM)
|
Micron Technology, Inc.
|
| GS82032AT-100 GS82032AT-150 GS82032AT-150I GS82032 |
GS820(E)32A
64K x 32 2Mb Synchronous Burst SRAM
|
GSI[GSI Technology]
|
| GS82032AGT-166I GS82032AGT-180 GS82032AGT-133IT |
64K x 32 2Mb Synchronous Burst SRAM 64K X 32 CACHE SRAM, 8.5 ns, PQFP100
64K x 32 2Mb Synchronous Burst SRAM 64K X 32 CACHE SRAM, 8 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
|
GSI Technology, Inc.
|
| N02L1618C1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
| N02L83W2AT5I N02L83W2AT5IT N02L83W2AN25I N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K ? 8 bit
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit
|
ON Semiconductor
|
| N02L63W3A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
ON Semiconductor
|
| N02M083WL1AN-70I N02M083WL1A N02M083WL1AD N02M083W |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| CY7C1515AV18-200BZXI CY7C1526AV18-278BZXC CY7C1526 |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
8M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
